Seminars Archive

Spectromicroscopy of Semiconductor Interfaces

Abstract
We studied microscopical lateral variations of metal-semiconductor interface parameters with spatially-resolved photoemission techniques. The combination of laboratory-based photon sources and synchrotron radiation reveals the relative role of the local chemistry and morphology in determining the barrier height. These experiments reevaluate the notion of Schottky-like and reactive interfaces and confirm the idea that interface barriers have local character, contrary to how their effects are treated in virtually all theories of interface properties.