Seminars Archive
X-Ray Absorption Spectroscopy to characterize ion-implanted systems.
Abstract
Tuesday, September 9, 2003, 14:30
Seminar Room, ground floor, Building "T"
Sincrotrone Trieste, Basovizza
X-Ray Absorption Spectroscopy to characterize ion-implanted
systems.
Agns Traverse
(Laboratoire pour l`Utilisation du Rayonnement Electromagntique,
Universit Paris-Sud,Orsay Cedex France )
Abstract
X-ray absorption spectroscopy allows the experimentalist to characterize
the local environment of a given type of atom embedded in a target. It
is thus well suited in the case of ion implanted materials where one wants
i) to describe the site occupied by the implanted impurity, ii) to detect
interactions between the implanted impurity and the matrix atoms that could
lead to the formation of new phases. After a short introduction of the
technique itself, I will present absorption coefficients measured at the
K edge of transition metal and noble ions implanted in ceramics, in form
of bulk or thin films (AlN, ZrN). The effect of the implantation energy,
the implanted fluence and the nature of the ions as compared to the nature
of the matrix atoms will be addressed. An interpretation of the identified
phases resulting from the implantation process will be
presented.
